Erratum: Dislocations in Silicon Carbide

Characterization of Dislocations Structures and Properties in Silicon Carbide Bulk Crystals and Epilayers

of the Thesis Characterization of Dislocations Structures and Properties in Silicon Carbide Bulk Crystals and Epilayers

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Nature of dislocations in silicon.

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.